| 发明名称 |
Method for patterning detector crystal using Q-switched laser |
| 摘要 |
A semiconductor radiation detector crystal is patterned by using a Q-switched laser to selectively remove material from a surface of said semiconductor radiation detector crystal, thus producing a groove in said surface that penetrates deeper than the thickness of a diffused layer on said surface.
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| 申请公布号 |
US7727796(B2) |
申请公布日期 |
2010.06.01 |
| 申请号 |
US20070796104 |
申请日期 |
2007.04.26 |
| 申请人 |
OXFORD INSTRUMENTS ANALYTICAL OY |
发明人 |
SIPILAE HEIKKI JOHANNES;ANDERSSON HANS;NENONEN SEPPO;KALLIOPUSKA JUHA JOUNI |
| 分类号 |
H01L31/0248;H01L31/072 |
主分类号 |
H01L31/0248 |
| 代理机构 |
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