发明名称 Nonvolatile memory device having a bit line select voltage generator adapted to a temperature change
摘要 A bit line select voltage generator includes a first voltage generator, a second voltage generator, and a voltage transmission unit. The first voltage generator is configured to divide a reference voltage of a reference voltage generator, generate a control voltage, and generate a first voltage in response to the control voltage. In this case, the first voltage is raised according to an increase of a temperature and output. The second voltage generator is configured to divide the reference voltage and generate a second voltage of a level lower than that of the first voltage. The voltage transmission unit is configured to transmit the first voltage or the second voltage to an output terminal according to a voltage level of a first voltage transmit control signal or a second voltage transmit control signal.
申请公布号 US7729174(B2) 申请公布日期 2010.06.01
申请号 US20070949655 申请日期 2007.12.03
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE JIN-HAENG
分类号 G11C16/26 主分类号 G11C16/26
代理机构 代理人
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