| 摘要 |
The present invention provides a charge pump circuit capable of achieving desired boosting operation even when a high-side switch for precharge or a low-side switch for driving output is constructed by a low-withstand-voltage transistor. The high level of a drive input signal for driving a high-side switch for precharge and a low-side switch for driving output in response to a clock signal is set to the level of a boosted output voltage. The low level of the drive input signal is set to the level of an input voltage, not ground potential.
|
