| 摘要 |
PURPOSE: A manufacturing method of the semiconductor device for including M T M capacitor is that the level difference is formed in the bottom electrode without the addition mask process. In the same capacitor area, capacitance is increased. CONSTITUTION: The first insulating layer(110) is formed on the semiconductor substrate(100) equipped with the first area. The electrode pattern buried to the first insulating layer of the first area is formed. The second insulating layer(140) is formed on the first insulating layer and electrode pattern. The first and the second insulating layer are etched and the recess portion(125) limiting the capacitor region is formed in the first area. One part of the electrode pattern is projected from the floor side of the recess portion.
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