| 摘要 |
PURPOSE: A device isolating film forming method of the semiconductor device previously eliminates the liner nitride film formed in the active area the CMP process. Over etch generation of the oxide film due to the etch rate difference is prevented. CONSTITUTION: The first oxide film(130) and primary nitride film(120) are successively formed on the semiconductor substrate(100). The first oxide film, and the primary nitride film and semiconductor substrate are etched and the trench is formed in the semiconductor substrate. The second nitride film(160) is formed on the trench inside and primary nitride film. Photoresist is spread on the trench inside and the second nitride film.
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