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发明名称
Method of fabricating a bipolar-junction transistor using a nanowire
摘要
申请公布号
KR100960691(B1)
申请公布日期
2010.05.31
申请号
KR20080020574
申请日期
2008.03.05
申请人
发明人
分类号
H01L29/72;B82B3/00;H01L21/265
主分类号
H01L29/72
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代理人
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