发明名称 ORGANIC THIN FILM TRANSITOR
摘要 <p>PURPOSE: An organic thin film transistor comprises the organic semiconductor layer including the organic semiconductor and conductivity polymer. Resistance between the drain electrode and the source electrode are reduced. CONSTITUTION: The gate electrode(120) is formed on the substrate(110). The gate electrode is included of conductor. The organic semiconductor layer(140) is formed on the gate insulating layer. The organic semiconductor layer comprises the organic semiconductor and conductivity polymer. It is each other separated and the source electrode(150) and drain electrode are formed.</p>
申请公布号 KR20100057309(A) 申请公布日期 2010.05.31
申请号 KR20080116293 申请日期 2008.11.21
申请人 LG DISPLAY CO., LTD. 发明人 HEO, JAE SEOK
分类号 H01L29/786;G02F1/136;H05B33/22 主分类号 H01L29/786
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