发明名称 |
METHOD OF MANUFACTURING PHOTOMASK AND PATTREN TRANSFER METHOD USING THE SMAE |
摘要 |
<p>PURPOSE: A manufacturing method of a photo mask and a transfer method using the photo mask are provided to control the generation of growing impurities on the surface of the photo mask by reducing Cr ions. CONSTITUTION: A manufacturing method of a photo mask comprises the following steps: patterning a constant pattern(2a) on a thin film formed with chromium formed on a light-transmissive substrate(1); and reducing the amount of the chromium or controlling the ionization of the chromium included in the patterned thin film. The reduction of the chromium is processed by irradiating light with the wavelength less than 200 nanometers, and heating the thin film at 150~500 deg C for more than 1 hour.</p> |
申请公布号 |
KR20100057512(A) |
申请公布日期 |
2010.05.31 |
申请号 |
KR20090112462 |
申请日期 |
2009.11.20 |
申请人 |
HOYA CORPORATION |
发明人 |
MURAI MAKOTO;SHINCHI HIROYUKI;TSUCHIYA MASAYOSHI;HONDA KUNIYUKI;TANAKA TOMOKAZU;HASHIMOTO NORITAKA |
分类号 |
G03F1/54;G03F1/82;H01L21/027 |
主分类号 |
G03F1/54 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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