| 摘要 |
PURPOSE: A semiconductor device and manufacturing method thereof form the N+ source/drain photo process and P+ source/drain photo process by using one photo process. The process cost is reduced through the processing simplification. CONSTITUTION: The gate electrode(130) is formed on the semiconductor substrate(100). The first conductivity type first ion implantation region is formed in the gate electrode both side. The first conductivity type secondary ion implant region is formed within the first conductivity type ion implantation region. In the first conductivity type secondary ion implant region, concentration lows than the first conductivity type first ion implantation region. The salicide layer(170) is formed on the upper side of the gate electrode, and the first ion implantation region and the secondary ion implant region.
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