A NOVEL LAYOUT ARCHITECTURE FOR PERFORMANCE ENHANCEMENT

摘要

PURPOSE: A new layout structure for the performance improvement selectively makes something/somebody grow up the thermal oxide trench lighter. The trench interface is improved. CONSTITUTION: The first field effect transistor is arranged in the active area(102). The first field effect transistor comprises the first gate(114), the first source(116) and the first drain(118). The first source is arranged to the first gate on the first area which is near. The first drain is arranged to the first gate on the second part which is near. The isolation structure is arranged in the active area. The isolation structure comprises the isolation gate(140) and the isolation source neighbor-arranged with the isolation gate.