| 摘要 |
PROBLEM TO BE SOLVED: To provide a temperature sensor measuring a temperature at a higher accuracy than before, even if there is a variation in a manufacturing quality of constituent semiconductor elements of a circuit which generates a temperature dependent current. SOLUTION: The temperature sensor includes: a temperature dependent voltage generation circuit for generating a temperature dependent potential which is dependent on the temperature; a current generation circuit for running the temperature dependent current based on the temperature dependent potential; a reference current generation circuit for generating a reference current which is not dependent on the temperature; a capacitor to be alternately charged on a first charging cycle by the temperature dependent current and on a second charging cycle by the reference current; a pulse generation circuit for generating pulses by comparing a capacitor charging voltage with a reference voltage; and a control circuit for alternately supplying the temperature dependent current and the reference current to the capacitor, and the sensor further includes a switch for switching a connection relation between a MOS transistor forming a current source circuit which is internally constituted by the temperature dependent voltage generation circuit, and a bipolar transistor which is a load to the current source circuit. COPYRIGHT: (C)2010,JPO&INPIT |
