| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory device that achieves high-speed access without increasing an array area. SOLUTION: In a memory cell array region, gate word lines (32a-32d) are arranged linearly between source impurity regions (30a, 30b) and drain impurity regions (31a-31d). While gate word line protrusions (33a-33d) are provided in a border region of a memory cell forming area (20), a contact to this gate word line protrusion is provided in the border region of the memory cell of an adjacent line. In the region where this protrusion is arranged, the drain impurity region is arranged out of alignment from the center of the memory cell forming region so that the interval of the drain impurity regions becomes large. COPYRIGHT: (C)2010,JPO&INPIT |
