发明名称 STRUCTURES AND METHODS FOR REDUCING JUNCTION LEAKAGE IN SEMICONDUCTOR DEVICES
摘要 Structures and method for reducing junction leakage in semiconductor devices. The die can include a substrate having a cut edge, a first region of first conductivity type within the substrate and a region of a second conductivity type within the substrate and in contact with the first region forming a junction. At least one semiconductor device is on the substrate. A second region of the first conductivity type is between the plurality of semiconductor devices and the cut edge within the region of the second conductivity type, and extending to the junction. The second region of the first conductivity type can isolate the at least one semiconductor device from leakage pathways created by saw damage at the junction along the cut edge.
申请公布号 US2010127356(A1) 申请公布日期 2010.05.27
申请号 US20080324038 申请日期 2008.11.26
申请人 DOYLE DANIEL;GLEASON JEFFREY 发明人 DOYLE DANIEL;GLEASON JEFFREY
分类号 H01L23/544;H01L21/302;H01L21/77;H01L27/00 主分类号 H01L23/544
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