| 摘要 |
Systems and methods for tamper resistant memory devices are provided. In one embodiment, a memory device comprises a memory cell for storing digital data, the memory cell having a plurality of memory addresses accessible for read and write operations through a memory interface; and a tamper detection circuit coupled to the memory cell, the tamper detection circuit comprising: a communications decoder coupled to the memory interface, wherein the communications decoder observes sequences of memory access operations to the memory cell; at least one timer for counting a duration of time; a tamper detect state machine responsive to the communications decoder and the at least one timer; and a data destruct engine responsive to the tamper detection state machine, wherein upon receiving an activation signal from the tamper diction state machine, the data destruct engine overwrites digital data stored in the memory cell.
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