SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

Provided is a high-performance semiconductor device which hardly causes electric field concentration and can suppress a leak current and minimize an ineffective region in the PN junction region while assuring a sufficient area of the shot-key junction region.  The semiconductor device can be manufactured effectively and easily.  The semiconductor device includes a PN junction region (7a) and a shot-key junction region (7b) on one side of a first conductive type semiconductor substrate (1) made from SiC.  In the PN junction region (7a) are formed a convex portion (2a) having a cross section of a trapezoid shape including a second conductive layer (2) arranged on the semiconductor substrate (1) and a contact layer (3) formed on the second conductive layer (2) of the convex portion (2a) so as to be in the ohmic contact with the second conductive layer (2).  A shot-key electrode (4) is formed to cover the side surface of the convex portion (2a) and the contact layer (3) and to be continuous with the PN junction region (7a) and the shot-key junction region (7b).