| 摘要 |
PURPOSE: A semiconductor device including an anti-fuse and a manufacturing method thereof are provided to reduce the area of a chip by forming an anti-fuse between a contact and an active area of a source/drain of a transistor. CONSTITUTION: A transistor is formed on a semiconductor substrate(110). The transistor includes a source active area(122) and a drain active area(123). An anti-fuse made of oxide to cover at least part of a source active area or drain active area of the transistor is formed. The anti-fuse made of oxide covering at least part of the source active area or the drain active area of transistor is formed. A contact is formed in contact with the anti-fuse.
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