| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to reduce a transistor process by connecting a VDD to a salicide contact between an STI area and a photo diode. CONSTITUTION: An element isolation area(110) and an active area are formed on a substrate. A photodiode(120) is formed on the active area with a first distance with the element isolation area. A contact is formed on an active area between the photodiode and the element isolation area. A via plug is formed on the contact. A wiring(150) is formed on the via plug.
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