| 摘要 |
The present invention is directed to a method for detecting anomalies in a semiconductor substrate comprising the steps of providing a semiconductor substrate, making an inspection image I of the substrate, generating an image K from image I by image processing, generating image B by binarizing image K, and examining image I using image B, characterized in that generating image K comprises multiplying a high-pass convolution filtered image G(I) from image I and a first weight image W1. The present invention is also directed to an apparatus suitable for applying the method.
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