发明名称 CHARGED PARTICLE BEAM LITHOGRAPHY DEVICE AND METHOD
摘要 <P>PROBLEM TO BE SOLVED: To complete lithography even when processing of a lithography control processing part 2a abnormally terminates. <P>SOLUTION: In this charged particle beam lithography device 20 having a lithography part 1, a lithography control part 2, a JOB control part 3, a shot data generation part 4, a deflection control part 5, and a stage control part 6, when the processing of the lithography control processing part 2a abnormally terminates, a monitoring processing part 12 restarts the processing of the drawing control processing part 2a, compares the respective latest communication contents between the lithography control processing part 2a and the JOB control part 3, the shot data generation part 4, the deflection control part 5, and the stage control part 6 held in processing parts 13, 14, 15, 16 with the latest communication contents held in a lithography state storage area 11 as lithography state information, corrects the latest communication contents held in the lithography state storage area 11 by the latest communication contents held in the processing parts 13, 14, 15, 16, and restarts the processing of the lithography control processing part 2a to continue lithography. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010118583(A) 申请公布日期 2010.05.27
申请号 JP20080291831 申请日期 2008.11.14
申请人 NUFLARE TECHNOLOGY INC 发明人 TSURUMAKI HIDEYUKI
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
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