摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an aqueous dispersing element for chemical mechanical polishing capable of performing polishing without any copper remainder (copper residue) and corrosion while striking a balance between high polishing speed and highly flat characteristics without causing any defects in a copper film and an insulation film, to provide a method of preparing the dispersing element, and to provide a method of performing chemical mechanical polishing of a semiconductor device. <P>SOLUTION: The aqueous dispersing element for chemical mechanical polishing includes an amino acid (A), an imidazole dielectric (B), an oxidant (C), and an abrasive grain (D), where the ratio (W<SB>A</SB>/W<SB>B</SB>) of the content (W<SB>A</SB>) [mass%] of the constituent of (A) to the content (W<SB>B</SB>) [mass%] of the constituent of (B) ranges from 1 to 100. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |