| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma-processing device adjustable in a processing rate to an object to be processed, by controlling pressure loss in a gas flow. SOLUTION: A first gas nozzle 3 with a hole 30 and a second gas nozzle 4 with the hole 40 constituting a gas-flow channel for a plasma process are disposed opposite to the object to be processed S, in an overlapping position with a gap held in-between in a processing chamber 1 capable of internally evacuating the air. The second gas nozzle 4 is installed rotatably by a driving mechanism 6 as chargeable in a pressure loss of gas passing through the holes 30, 40. COPYRIGHT: (C)2010,JPO&INPIT |
