| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a temperature-compensated force detecting element which suppresses leak current due to a parasitic diode. Ž<P>SOLUTION: The force detecting element 100 includes: a silicon substrate 10; an insulating layer 20 provided on the silicon layer 10; a p-type device layer 30 provided on the insulating layer 20; and a positive-side electrode 60a and a negative-side electrode 60b provided on the device layer 30 and arranged with a spacing between them. In the device layer 30, a gauge section 37 which is electrically connected to the positive-side electrode 60a and has a p-type impurity concentration higher than that of the remainder, and an n-type region 36 which is electrically connected to the negative-side electrode 60b are formed. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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