| 摘要 |
The invention relates to an optoelectronic semiconductor chip having an active zone (20), comprising a multiple quantum well structure provided for the production of electromagnetic radiation, having a plurality of sequential quantum well layers (210, 220, 230). The multiple quantum well structure comprises at least one first quantum well layer (210) that is doped in an n-conductive fashion and disposed between two barrier layers (250) doped in an n-conductive fashion and adjacent to the first quantum well layer. Said quantum well structure comprises a second quantum well layer (220) that is undoped and is disposed between two barrier layers (250, 260) adjacent to the second quantum well layer, one of said layers being doped and the other being undoped. In addition, the multiple quantum well structure comprises at least one third quantum well layer (230) that is undoped and disposed between two undoped barrier layers (260) adjacent to the third quantum well layer. |
