SOLID-STATE IMAGE PICKUP DEVICE, ITS MANUFACTURING METHOD, AND IMAGE PICKUP DEVICE

摘要

PROBLEM TO BE SOLVED: To increase an area of a photoelectric conversion part by reducing a layout area of a pixel transistor.

SOLUTION: A solid-state image pickup device includes: a photoelectric conversion part 12 formed on a semiconductor substrate 11 so as to obtain a signal charge by photoelectrically converting incident light; a pixel transistor 13 formed on the semiconductor substrate 11 so as to convert the signal charge read out from the photoelectric conversion part 12 into a voltage; and an element isolation region 16 formed at the semiconductor substrate 11 so as to isolate the photoelectric conversion part 12 and an active region 15 where the pixel transistor 13 is formed. The pixel transistor 13 includes a plurality of transistors. At least one of the plurality of transistors is configured so that a gate width direction of a gate electrode 22 faces the photoelectric conversion part 12. The gate electrode 22 of the one transistor is formed in the active region 15 via a gate insulating film 20 so that at least the side facing the photoelectric conversion part 12 is formed above in the active region 15.

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