PROGRAMMING METHOD FOR NONVOLATILE MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a programming method for a nonvolatile memory device.

SOLUTION: The programming method for a nonvolatile memory device includes: a stage in which a channel of a memory cell selected by programmed data is floated; and a stage in which the word lines of the selected and non-selected memory cells are driven so as to cause gate-induced drain leakage between the selected memory cell and the non-selected memory cell.

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