| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of cleaning a plasma processing device by which the surface of a plasma processing chamber is efficiently cleaned to improve throughput, and further to provide a method of removing a resist mask formed on a low-dielectric-constant film (Low-k film) being a workpiece simultaneously with the cleaning. Ž<P>SOLUTION: As a method for improving the throughput, a plasma cleaning using CO<SB>2</SB>gas is carried out in a state wherein the low-dielectric-constant film (Low-k film) etched by using CxFx-based gas is mounted on a lower electrode as it is to remove deposits deposited on the surface of the plasma processing chamber. At this time, the resist mask patterned on the Low-k film can be removed simultaneously, so a processing time can be greatly shortened. Further, an electrode surface where a wafer is installed is not exposed to plasma during the cleaning, so that the electrode is prevented from deteriorating. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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