发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 A semiconductor integrated circuit comprises a first transistor which has one end connected to a first node where a first voltage is output, and which transfers the first voltage to an output terminal, a second transistor which has one end connected to a second node where the second voltage is output, and which transfers the second voltage to the output terminal, a third booster circuit which supplies a third voltage obtained by further boosting the first voltage to a control terminal of the first transistor, and a fourth booster circuit which supplies a fourth voltage obtained by further boosting the second voltage to a control terminal of the second transistor. The third booster circuit lowers a voltage supplied to the control terminal of the first transistor to turn off the first transistor at a time after discharging of the first node is started. The fourth booster circuit increases, in accordance with a signal from the third booster circuit, a voltage supplied to the control terminal of the second transistor to turn on the second transistor after the first transistor is turned off.
申请公布号 US2010127764(A1) 申请公布日期 2010.05.27
申请号 US20090556937 申请日期 2009.09.10
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SUZUKI ATSUSHI
分类号 G05F1/10 主分类号 G05F1/10
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