发明名称 METHOD FOR MANUFACTURING ORGANIC THIN FILM TRANSISTOR, AND ORGANIC THIN FILM TRANSISTOR
摘要 <p>Provided are an organic TFT manufacturing method by which ink leakage into an unnecessary region can be suppressed and excellent characteristics and high reliability can be obtained, and an organic TFT.  The organic TFT manufacturing method has: a step of forming a source electrode and a drain electrode on a base member; a step of forming a bank layer, which has openings on a channel region between the source electrode and the drain electrode and on a predetermined region of the base member and a groove surrounding the opening on the circumference of the opening on the predetermined region; and a step of forming the organic semiconductor film by dropping an organic semiconductor solution to the opening on the bank layer formed on the channel region.</p>
申请公布号 WO2010058662(A1) 申请公布日期 2010.05.27
申请号 WO2009JP67627 申请日期 2009.10.09
申请人 KONICA MINOLTA HOLDINGS, INC.;TSUZUKI SEIICHI;YAMADA JUN 发明人 TSUZUKI SEIICHI;YAMADA JUN
分类号 H01L51/40;H01L29/786;H01L21/336;H01L51/05 主分类号 H01L51/40
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