METHOD FOR MANUFACTURING GAN LIGHT EMITTING DIODE HAVING INVERSED MESA STRUCTURE

摘要

PURPOSE: A method for manufacturing a nitride semiconductor light emitting device with a reverse mesa structure is provided to maximize the area of an active layer with the same chip size and minimize the lateral loss due to plasma using wet-etching. CONSTITUTION: A light emitting structure is formed by successively growing a first conductive nitride semiconductor layer(20), an active layer(30), and a second conductive nitride semiconductor layer(40) on a substrate(10). A light emitting structure is divided into a plurality of regions by forming a groove to expose the substrate on the light emitting structure. An interface region with the substrate among respective division areas is selectively removed to separate the region in contact with the groove from the substrate among respective division areas of the light emitting structure. A wet etching is applied to the division area from the interface region with the substrate to form an incline crystal surface along the each division region.