| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a readout for semiconductor storage device and a semiconductor storage device which has a reduced circuit scale. <P>SOLUTION: In a plurality of sense amplifiers of the read circuit of the semiconductor memory device, for serially reading data from a serial output terminal 20, if the number of byte selectors which may be selected to determine an address at a predetermined time before determination of the address is four, only four sense amplifiers A1-A4 are required in total, and hence the read circuit and the semiconductor memory device are reduced in circuit scale. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
