| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device for reducing the number of processes in pattern formation using a mask material on a sidewall of a core material pattern. <P>SOLUTION: This method of manufacturing the semiconductor device includes: a process to form a core material pattern 15 containing a material generating acid to generate acid by light exposure on a foundation film; a process to selectively expose part of the core material pattern 15 except the end portion 15a in a longitudinal direction; a process to supply a mask material 16 onto the foundation film so as to cover the core material pattern 15, the mask material 16 being crosslinkable upon acid supply from the core material pattern 15; a process to etch back the mask material 16 to expose an upper surface of the core material pattern 15 and remove a portion of the mask material formed on the end portion 15a of the core material pattern 15, thereby leaving a mask material sidewall portion 16a formed on a sidewall of the core material pattern 15; and a process to remove the core material pattern 15 and process the foundation film by using the mask material sidewall portion 16a left on the foundation film as a mask. <P>COPYRIGHT: (C)2010,JPO&INPIT |
