| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming semiconductor films on dielectrics at temperatures below 400 DEG C. SOLUTION: This invention successfully achieves low temperature growth of germanium films using diboran. First, diboran gas is supplied into a reaction chamber at a temperature below 400 DEG C. The diboran decomposes itself at the given temperature and decomposed boron is attached to the surface of a dielectric, for e.g., SiO2, forming a nucleation site and/or a seed layer. Second, source gases for semiconductor film formation, for e.g., SiH4, GeH4, etc., are supplied into the reaction chamber, thereby forming a semiconductor film. COPYRIGHT: (C)2010,JPO&INPIT |
