发明名称 |
BIT LINE STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF |
摘要 |
A bit line structure and associated fabrication method are provided for a semiconductor element or circuit arrangement. The bit line structure contains a surface bit line and a buried bit line. The buried bit line is formed in an upper section of a trench and is connected to an associated first doping region via a first connection layer. A first trench filling layer, which is insulated from the buried bit line by a second trench insulating layer, is situated in a lower section of the trench.
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申请公布号 |
US2010129972(A1) |
申请公布日期 |
2010.05.27 |
申请号 |
US20100695277 |
申请日期 |
2010.01.28 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
KAKOSCHKE RONALD;SCHULER FRANZ;TEMPEL GEORG |
分类号 |
H01L21/762;H01L21/336;H01L21/8246;H01L21/8247;H01L27/115 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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