发明名称 SEMICONDUCTOR MEMORY
摘要 A regular capacitor is saturated by an electric charge of a regular memory cell holding a high logic level and is not saturated by an electric charge from the regular memory cell holding a low logic level. A reference capacitor is saturated by the electric charge from a reference memory cell holding the high logic level. A differential sense amplifier differentially amplifies a difference between a regular read voltage read from the regular capacitor and a voltage which is lower by a first voltage than a reference read voltage being a saturation voltage read from the reference capacitor, and generates logic of data held in the memory cell. Accordingly, a difference between the reference voltage and the read voltage corresponding to the low logic level can be made relatively large. As a result, it is possible to improve a read margin.
申请公布号 US2010128515(A1) 申请公布日期 2010.05.27
申请号 US20100696580 申请日期 2010.01.29
申请人 FUJITSU MICROELECTRONICS LIMITED 发明人 FUKUSHI ISAO
分类号 G11C11/24;G11C5/14;G11C7/00;G11C7/02 主分类号 G11C11/24
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