| 摘要 |
This invention provides a process for producing a single crystal by a Chokralsky method in which a horizontal magnetic field is applied, characterized in that a single crystal is pulled up so that the radial magnetic field strength gradient &Dgr;Br/&Dgr;Rc in such a direction that centers of magnetic field generation coils (25) are connected, is more than 5.5 (gauss/mm) and not more than 10 (gauss/mm) wherein &Dgr;Br represents the amount of a variation in magnetic field strength from an original point (O) as the center part on a solid-liquid interface of a single crystal (12) to the inner wall (A) of a crucible on the surface of a melt, gauss; and &Dgr;Rc represents a radial distance from the original point (O) to the inner wall (A) of the crucible on the surface of the melt, mm. According to the production process of a single crystal, in growing a single crystal, the variation in temperature gradient near the solid-liquid interface can be minimized, and a high-quality single crystal having a desired defect zone in the direction of crystal growth can easily be produced with high productivity at high yield.
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