| 摘要 |
The present invention resides in a silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material in a quartz crucible based on a Czochralski method, wherein the method comprises the steps of: applying a DC voltage between an outer wall of the quartz crucible acts as a positive electrode and a pulling wire or pulling shaft for pulling up the silicon single crystal acts as a negative electrode; and fixing an electric current flowing through the silicon single crystal over a period of time for pulling up the single crystal, to grow the single crystal; as well as a pulling apparatus therefor. This allows for provision of the silicon single crystal growth method and the pulling apparatus therefor, capable of generating appropriately crystallized layers, i.e., devitrification at an inner wall surface of a quartz crucible during a silicon single crystal growth process, and capable of simultaneously controlling a Li concentration of the silicon single crystal, to prevent generating dislocations in the single crystal growth process to thereby improve a yield and productivity of single crystal, while simultaneously restricting variances of thicknesses of those oxide films of sliced wafers which oxide films are to be formed by subsequent thermal oxidation treatments.
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