发明名称 |
METHOD FOR DEPOSITING THIN FILM ON WAFER |
摘要 |
PURPOSE: A method for depositing a thin film is provided to reduce manufacturing and maintenance costs of a thin film depositing device by not requiring a valve to spray gas. CONSTITUTION: A plurality of substrates is received on a substrate receiving unit(S310). A reduction layer is formed on the substrate by supplying a reducer through a reduction gas supply unit while rotating a gas spray unit around a substrate support unit so that the plurality of substrates successively passes the lower side of the reduction gas supply unit(S320). A thin film is formed on the substrate by supplying a precursor, the reaction gas, the reducer, and purge gas through the gas supply unit while rotating the gas spray unit around the substrate support unit sot that the substrate with the reduction layer passes the lower side of the reaction gas supply unit, a raw gas supply unit, and the reduction gas supply unit successively(S330).
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申请公布号 |
KR20100056258(A) |
申请公布日期 |
2010.05.27 |
申请号 |
KR20080115339 |
申请日期 |
2008.11.19 |
申请人 |
INTEGRATED PROCESS SYSTEMS LTD. |
发明人 |
LEE, SANG JIN;YOU, DONG HO;JEON, TAE HO |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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