| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which surrounds element formation regions by a conductive material simply by depositing the conductive material without using an SOI substrate. SOLUTION: An insulating material is deposited on surfaces of sidewalls of trenches 3 formed so as to surround an element formation region 5, voids in vicinity of central axes of the trenches 3a are filled with the conductive material 14 made of metal (such as copper or aluminum) having relatively low melting point, for example, less than or equal to 1,100 °C, and the conductive material 14 in a portion of the trenches 3 is conducted with an electrode 9a formed over a surface of a wafer substrate 2. The conductive material 14 to be filled in the trenches 14 is also deposited on the rear surface of the wafer substrate 2. COPYRIGHT: (C)2010,JPO&INPIT
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