SILICON SINGLE CRYSTAL AND METHOD FOR GROWING THEREOF, AND SILICON WAFER AND METHOD FOR MANUFACTURING THEREOF

摘要

A method for growing a silicon single crystal having a hydrogen defect density of equal to or less than 0.003 pieces/cm2 using a Czochralski method, includes: a crystal growth step performed in an atmospheric gas containing a hydrogen-containing gas so as to allow hydrogen gas to have a partial pressure of equal to or higher than 40 Pa and equal to or lower than 400 Pa; and a cooling state control step of setting the amount of time in a hydrogen aggregation temperature range which is a range of equal to or lower than 850° C. and equal to or higher than 550° C. to be equal to or longer than 100 minutes and equal to or shorter than 480 minutes.