发明名称 |
THERMOELECTRIC APPARATUS AND METHODS OF MANUFACTURING THE SAME |
摘要 |
A thermoelectric apparatus comprises at least one pair of adjacent portions of p-type and n-type semiconductor material each portion having respective, generally oppositely disposed, first and second surface regions. Said first surface regions of each said pair are coupled either directly, or indirectly via a metallic conductor, or indirectly via a doped electrically conductive semiconductor and said second surface regions are electrically connectable to an external circuit. The p-type and n-type semiconductor material comprises porous semiconductor material which allows a high dimensionless figure of merit to be achieved for either thermo-electrical power generation or thermo electrical cooling. |
申请公布号 |
WO2010003629(A3) |
申请公布日期 |
2010.05.27 |
申请号 |
WO2009EP04897 |
申请日期 |
2009.07.07 |
申请人 |
MAX-PLANCK-GESELLSCHAFT ZUR FOERDERUNG DER WISSENSCHAFT E. V.;SCHMIDT, VOLKER;SENZ, STEPHAN;GOESELE, ULRICH |
发明人 |
SCHMIDT, VOLKER;SENZ, STEPHAN;GOESELE, ULRICH |
分类号 |
H01L35/22;H01L35/32;H01L35/34 |
主分类号 |
H01L35/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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