发明名称 THERMOELECTRIC APPARATUS AND METHODS OF MANUFACTURING THE SAME
摘要 A thermoelectric apparatus comprises at least one pair of adjacent portions of p-type and n-type semiconductor material each portion having respective, generally oppositely disposed, first and second surface regions. Said first surface regions of each said pair are coupled either directly, or indirectly via a metallic conductor, or indirectly via a doped electrically conductive semiconductor and said second surface regions are electrically connectable to an external circuit. The p-type and n-type semiconductor material comprises porous semiconductor material which allows a high dimensionless figure of merit to be achieved for either thermo-electrical power generation or thermo electrical cooling.
申请公布号 WO2010003629(A3) 申请公布日期 2010.05.27
申请号 WO2009EP04897 申请日期 2009.07.07
申请人 MAX-PLANCK-GESELLSCHAFT ZUR FOERDERUNG DER WISSENSCHAFT E. V.;SCHMIDT, VOLKER;SENZ, STEPHAN;GOESELE, ULRICH 发明人 SCHMIDT, VOLKER;SENZ, STEPHAN;GOESELE, ULRICH
分类号 H01L35/22;H01L35/32;H01L35/34 主分类号 H01L35/22
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