| 摘要 |
861,624. Semi-conductor devices. SIEMENSSCHUCKERTWERKE A.G. Aug. 18, 1959 [Sept. 23, 1958], No. 28188/59. Drawings to Specification. Class 37. A process for the surface treatment of a semi-conductor element having a plurality of electrodes and at least one PN junction, comprises exposing the element to a current of vapour whilst maintaining the element at a temperature below the condensation point, so that some of the vapour condenses on its surface and continuously removing the condensate during the period of exposure to the current of vapour. The vapour may be steam-produced from highly-distilled water or may be produced from pure alcohol and if the process follows an etching process, the vapour may contain an additive suitable for neutralizing the etching residues. The condensate may be removed by the high speed of flow of the vapour, or by an additional current of compressed gas, or by subjecting the element to a rapid rotational movement The temperature of the element may be maintained below the condensation point by mounting it in good heat transfer relationship on a metal block, which may be rotated, of high thermal capacity and which may be cooled. |
