| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve such a problem that a total reflection component and a Fresnel reflection component of an optical semiconductor device having an AlGaInP semiconductor layer are not suppressed sufficiently, so that a light extraction efficiency is low. <P>SOLUTION: A light extraction face side of an n-type AlGaInP cladding layer 11' is formed to have a corrugated-slope two-dimensional periodic projecting structure S including a linear projecting part having a side face of a corrugated slope. <P>COPYRIGHT: (C)2010,JPO&INPIT |
