| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which can prevent an electrical short circuit between wires by preventing contact between the wires occurring in running in a liquid resin. <P>SOLUTION: A rectangular principal surface of a semiconductor chip CH includes first and second vertexes A1, A2 located on a diagonal line, and first and second sides L1, L2 connecting the first and second vertexes A1, A2 to each other. Wires WR are formed between electrodes IL and pads PD of the semiconductor chip CH. The wires WR are housed in a cavity CV of a die ML. A liquid resin is run into the cavity CV to advance from the first vertex A1 to the second vertex A2 along the first and second sides L1, L2. A resin part is formed by curing the liquid resin. The formation of the wire WR is carried out by forming the wire WR to pass through a distant side from the first vertex A1 with respect to the line connecting the pad PD to the electrode IL. <P>COPYRIGHT: (C)2010,JPO&INPIT |
