| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide ink for etching resist to form a fine pattern, and a formation method of an etching resist pattern using the ink. <P>SOLUTION: The ink for etching resist comprises a constitution component with an average particle diameter of 100 nm or less, a first resin with an acid value of 200 or more, a second resin with Tg of 25°C or lower, a mold releasing agent, a surface energy regulating agent, and a solvent. Using the ink for etching resist, the etching resist pattern is formed by a reversed letterpress printing method. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
