| 摘要 |
PROBLEM TO BE SOLVED: To provide a lateral MOS transistor capable of having more stable electric characteristics than the conventional structure. SOLUTION: The lateral MOS transistor 1 has a P-type body region 15 extending in a direction d1 in a P-type semiconductor substrate 10, an N-type drain region 11 formed apart from the body region 15, a body contact region 21 of a high-concentration P-type and an N-type source region 16 formed in the body region 15, a drain contact region 12 of a high-concentration N type formed in the drain region 11, and a P-type diffusion region 13 formed between the source region 16 and drain contact region 12. The diffusion region 13 has a main region 13a formed extending in the direction d1 apart from the body region 15 in the drain region 11, and a projection region 13b projecting in a direction from one or a plurality of dispersed partial areas of an outer peripheral end opposed to the body region 15 in the main region to the body region 15 up to a position where the projection region communicates with the body region 15 or semiconductor substrate 10. COPYRIGHT: (C)2010,JPO&INPIT
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