| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing device and cleaning method for suppressing etching in an electrode on cleaning to drastically reduce an operation time for cleaning without using a material to protect the electrode; and attaining a high-rank quality in a cleaning operation, by making the improvement of an economic potential through the protection of the electrode compatible with the reduction of the time required for the cleaning operation. Ž<P>SOLUTION: A plurality of gas-jetting port 13 are opened on the upper and side surfaces of a cathode electrode 3, and a gas-supplying port 14 is formed at the lower surface of the cathode electrode 3 in communication with the gas-jetting port 13. The gas-supplying port 14 is designed to feed an etching-suppression gas 15 such as He or O<SB>2</SB>. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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