SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

<P>PROBLEM TO BE SOLVED: To provide an element isolation structure capable of suppressing the generation of a leakage current between adjacent element regions while holding an element isolation region. Ž<P>SOLUTION: The element isolation structure is composed of the element isolation region 41I formed on a semiconductor substrate 41 in a shallow trench isolation structure, first and second impurity diffusion regions 41N1 and 41N2 formed holding the element isolation region 41I and having a first conductivity type and a third impurity diffusion region 41PW formed under the element isolation region 41I and having a second conductivity type. The element isolation structure is further composed of a fourth impurity diffusion region 41DPW formed in a depth deeper than the depth of the third impurity diffusion region 41PW under the element isolation region 41I and containing a third impurity element of the second conductivity type and first and second impurity diffusion regions 41n1 and 41n2 formed in the depth shallower than the depth of the fourth impurity diffusion region DPW in the first and second impurity diffusion regions 41N1 and 41N2 and containing the third impurity element in addition to the first impurity element. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž