发明名称 |
NONVOLATILE MEMORY DEVICE AND PROGRAMMING METHOD |
摘要 |
A nonvolatile memory device includes; a memory cell array configured into a plurality of memory blocks, a decoder connected to the plurality of memory blocks via a word line, a page buffer connected to the plurality of memory blocks via a bit line, and control logic configured to define a control voltage applied to at least one of the word line and the bit line during a program/verify operation in accordance with a location of each one of the plurality of memory blocks within the memory cell array.
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申请公布号 |
US2010128532(A1) |
申请公布日期 |
2010.05.27 |
申请号 |
US20090581479 |
申请日期 |
2009.10.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG SOONWOOK;PARK KITAE;LEE JAEWOOK;JOO HAN SUNG |
分类号 |
G11C16/04;G11C16/06 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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