发明名称 |
Semiconductor devices including a dielectric layer |
摘要 |
A semiconductor device includes a substrate and a doped hafnium oxide layer disposed on the substrate, the doped hafnium oxide layer including a hafnium oxide layer doped with doping atoms and having tetragonal unit lattices, an ion size of the doping atom being greater than an ion size of a hafnium atom.
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申请公布号 |
US2010127319(A1) |
申请公布日期 |
2010.05.27 |
申请号 |
US20090591533 |
申请日期 |
2009.11.23 |
申请人 |
LIM JAESOON;CHO KYUHO;CHOI JAEHYOUNG;KIM YOUNSOO |
发明人 |
LIM JAESOON;CHO KYUHO;CHOI JAEHYOUNG;KIM YOUNSOO |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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