发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 Provided is a semiconductor integrated circuit device capable of realizing an analog circuit required to have a high-precision relative ratio between adjacent transistors, which is reduced in size and cost. A single MOS transistor is provided within each of well regions. A plurality of the MOS transistors is combined to serve as an analog circuit block. Since distances between the well regions and channel regions may be made equal to one another, a high-precision semiconductor integrated circuit device can be obtained.
申请公布号 US2010127334(A1) 申请公布日期 2010.05.27
申请号 US20090613081 申请日期 2009.11.05
申请人 HARADA HIROFUMI 发明人 HARADA HIROFUMI
分类号 H01L27/088 主分类号 H01L27/088
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